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Memories (SRAM, MRAM)

Memories (SRAM, MRAM)

Our radiation-hardened memories provide aerospace and military systems highly reliable, solutions for intense radiation environments.

Honeywell’s memory products are amongst the most reliable and robust products available today. Built on Honeywell’s silicon-on-insulator (SOI) processes, they offer unsurpassed radiation hardness.

Honeywell’s MRAM devices were designed from the ground-up for the radiation and space environments and have the largest temperature range available today. They are also immune to latch-up and single-event functional interrupt (SEFI).

Static Random Access Memory (SRAM)

Part Number Configuration Voltage (V) Max Access/Clock (ns) Package SMD No.
HX6256 32k x 8 5.0 <25 28 CFP 
36 CFP
5962-95845
HLX6256 32k x 8 3.3 R: <29,  W: <25 28 CFP 
36 CFP
QML - Equivalent
HX6356 32k x 8 5.0 <25 36 CFP 5962-95845
HX6228 128k x 8 5.0 <25 32 CFP
40 CFP
5962-98537
HLX6228 128k x 8 3.3 R: <32, W: <30 32 CFP
40 CFP
QML - Equivalent
HX6136 1k x 36 FIFO 5.0 R: <36,  W: <24 132 CQFP QML - Equivalent
HX6218 2k x 18 FIFO 5.0 R: <36,  W: <24 68 CFP QML - Equivalent
HX6409 4k x 9 FIFO 5.0 R: <36,  W: <24 32 CFP QML - Equivalent
HX6408 512k x 8 3.3 <20 36 CFP 5962-06203
HXS6408 512k x 8 1.8, 2.5, 3.3 R: <15,  W: <10 36 CFP 5962-08215
HRT6408 512k x 8 1.8, 2.5, 3.3 R: <15,  W: <10 36 CFP 5962-08215
HXSR01608 2M x 8  1.8, 2.5, 3.3 R: <20,  W: <12 40 CFP 5962-08202
HLXSR01608 2M x 8 1.5, 3.3 R: <25, W: <12 40 CFP 5962-08202
HXSR01632 512k x 32 1.8, 2.5, 3.3 R: <20,  W: <12 86 CFP 5962-08203
HLXSR01632 512k x 32 1.5, 3.3 R: <25, W: <12 86 CFP 5962-08203
HXSR06432 2M x 32 1.8, 2.5, 3.3 R: <20,  W: <15 86 CFP 5962-10232

Non-Volatile Magneto-Resistive Random Access Memory (MRAM)

Part Number Configuration Voltage (V) Max Access/Clock (ns) Package SMD No.
HXNV0100 64k x 16 1.8, 3.3 R: <80,  W: <140 64 CQFP NA
HXNV01600 16Mb 
(x8 or x16)
2.5, 3.3 R: <95,  W: <140 76 CQFP 5962-13212
HXNV06400 64Mb 
(x8 or x16)
2.5, 3.3 R: <130, W: <150 112 CFP 5962-14230

The Engineering Model (EM) version of the products, while not formally specified, are generally expected to meet a Total Dose Radiation level of 100KRad(Si). The EMs are not to be used for flight.

Datasheet  (14)
Size
HX6256
Size
0.74MB
HLX6256
Size
0.55MB
HX6356
Size
0.64MB
HX6228
Size
0.68MB
HX6409/HX6218/HX6136
Size
1.45MB
HX6408
Size
0.48MB
HXS6408
Size
0.48MB
HRT6408
Size
0.39MB
HXSR01608
Size
0.45MB
HLXSR01608
Size
0.37MB
HXSR01632
Size
0.76MB
HXNV0100
Size
1.37MB
HXNV01600
Size
5.21MB
HXNV06400
Size
0.59MB
Application Notes (2)
Size
Application Note 316
Size
0.32MB
Application Note 317
Size
0.08MB
Brochures (2)
Size
Radiation Hardened SOI CMOS Technology
Size
0.27MB
Magnetoresistive RAM
Size
2.30MB
Product Catalog (1)
Size
Rad Hard Microelectronics
Size
1.64MB

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