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AEROSPACE TECHNOLOGIES
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Location
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Latin America
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Asia Pacific
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Memories (SRAM, MRAM)
Memories (SRAM, MRAM)
Our radiation-hardened memories provide aerospace and military systems highly reliable, solutions for intense radiation environments.
Honeywell’s memory products are amongst the most reliable and robust products available today. Built on Honeywell’s silicon-on-insulator (SOI) processes, they offer unsurpassed radiation hardness.
Honeywell’s MRAM devices were designed from the ground-up for the radiation and space environments and have the largest temperature range available today. They are also immune to latch-up and single-event functional interrupt (SEFI).
Static Random Access Memory (SRAM)
| Part Number | Configuration | Voltage (V) | Max Access/Clock (ns) | Package | SMD No. |
| HX6256 | 32k x 8 | 5.0 | <25 | 28 CFP 36 CFP |
5962-95845 |
| HLX6256 | 32k x 8 | 3.3 | R: <29, W: <25 | 28 CFP 36 CFP |
QML - Equivalent |
| HX6356 | 32k x 8 | 5.0 | <25 | 36 CFP | 5962-95845 |
| HX6228 | 128k x 8 | 5.0 | <25 | 32 CFP 40 CFP |
5962-98537 |
| HLX6228 | 128k x 8 | 3.3 | R: <32, W: <30 | 32 CFP 40 CFP |
QML - Equivalent |
| HX6136 | 1k x 36 FIFO | 5.0 | R: <36, W: <24 | 132 CQFP | QML - Equivalent |
| HX6218 | 2k x 18 FIFO | 5.0 | R: <36, W: <24 | 68 CFP | QML - Equivalent |
| HX6409 | 4k x 9 FIFO | 5.0 | R: <36, W: <24 | 32 CFP | QML - Equivalent |
| HX6408 | 512k x 8 | 3.3 | <20 | 36 CFP | 5962-06203 |
| HXS6408 | 512k x 8 | 1.8, 2.5, 3.3 | R: <15, W: <10 | 36 CFP | 5962-08215 |
| HRT6408 | 512k x 8 | 1.8, 2.5, 3.3 | R: <15, W: <10 | 36 CFP | 5962-08215 |
| HXSR01608 | 2M x 8 | 1.8, 2.5, 3.3 | R: <20, W: <12 | 40 CFP | 5962-08202 |
| HLXSR01608 | 2M x 8 | 1.5, 3.3 | R: <25, W: <12 | 40 CFP | 5962-08202 |
| HXSR01632 | 512k x 32 | 1.8, 2.5, 3.3 | R: <20, W: <12 | 86 CFP | 5962-08203 |
| HLXSR01632 | 512k x 32 | 1.5, 3.3 | R: <25, W: <12 | 86 CFP | 5962-08203 |
| HXSR06432 | 2M x 32 | 1.8, 2.5, 3.3 | R: <20, W: <15 | 86 CFP | 5962-10232 |
Non-Volatile Magneto-Resistive Random Access Memory (MRAM)
| Part Number | Configuration | Voltage (V) | Max Access/Clock (ns) | Package | SMD No. |
| HXNV0100 | 64k x 16 | 1.8, 3.3 | R: <80, W: <140 | 64 CQFP | NA |
| HXNV01600 | 16Mb (x8 or x16) |
2.5, 3.3 | R: <95, W: <140 | 76 CQFP | 5962-13212 |
| HXNV06400 | 2Mb x 8 | 3.3, 2.5 | R = 100, W = 150 | 112 CFP | 5962-14230 |
The Engineering Model (EM) version of the products, while not formally specified, are generally expected to meet a Total Dose Radiation level of 100KRad(Si). The EMs are not to be used for flight.
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